Michael Anthony Nastasi, Ion Implantation and Synthesis of Materials
ISBN: 3540236740 | edition 2006 | PDF | 273 pages | 4 mb
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties.