Ion Implantation Technology

Silicon Technologies: Ion Implantation and Thermal Treatment (repost)

Annie Baudrant, "Silicon Technologies: Ion Implantation and Thermal Treatment"
2011 | ISBN: 1848212313 | English | 368 pages | PDF | 18 MB
Ion Implantation and Synthesis of Materials by Michael Nastasi [Repost]

Ion Implantation and Synthesis of Materials by Michael Nastasi
English | 9 Aug. 2006 | ISBN: 3540236740 | 273 Pages | PDF | 4 MB

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation.
Ion Implantation and Synthesis of Materials (repost)

Michael Anthony Nastasi, James W. Mayer, "Ion Implantation and Synthesis of Materials"
English | 2006-09-25 | ISBN: 3540236740 | 277 pages | PDF | 4.6 mb

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation.
Silicon Technologies: Ion Implantation and Thermal Treatment

Silicon Technologies: Ion Implantation and Thermal Treatment (ISTE) by Annie Baudrant
2011 | ISBN: 1848212313 | English | 368 pages | PDF | 17.65 MB
Ion Implantation and Synthesis of Materials (Repost)

Michael Anthony Nastasi, Ion Implantation and Synthesis of Materials
ISBN: 3540236740 | edition 2006 | PDF | 273 pages | 4 mb

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties.
Michael Anthony Nastasi, Ion Implantation and Synthesis of Materials(Repost)

Michael Anthony Nastasi, Ion Implantation and Synthesis of Materials
ISBN: 3540236740 | edition 2006 | PDF | 273 pages | 4 mb

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties.

Ion Implantation and Synthesis of Materials (Repost)  

Posted by elodar at Dec. 5, 2011
Ion Implantation and Synthesis of Materials (Repost)

Michael Anthony Nastasi, James W. Mayer, "Ion Implantation and Synthesis of Materials"
Sp..ri..nger | English | 2006-09-25 | ISBN: 3540236740 | 277 pages | PDF | 4.6 mb

Ion Exchange Technology II: Applications  

Posted by ChrisRedfield at Nov. 12, 2015
Ion Exchange Technology II: Applications

Dr. Inamuddin, Mohammad Luqman - Ion Exchange Technology II: Applications
Published: 2012-06-05 | ISBN: 9400740255, 9400795211 | PDF | 440 pages | 4.86 MB

Ion Exchange Technology I: Theory and Materials  

Posted by ChrisRedfield at April 23, 2015
Ion Exchange Technology I: Theory and Materials

Inamuddin, Mohammad Luqman - Ion Exchange Technology I: Theory and Materials
Published: 2012-06-02 | ISBN: 9400716990, 9401781729 | PDF | 550 pages | 9 MB
Industrial Ion Sources: Broadbeam Gridless Ion Source Technology [Repost]

Viacheslav V. Zhurin - Industrial Ion Sources: Broadbeam Gridless Ion Source Technology
Published: 2011-12-19 | ISBN: 3527410295 | PDF | 326 pages | 4 MB